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2 - 16 GHz Low Noise Gallium Arsenide FET Technical Data
ATF-13336
Features
* Low Noise Figure: 1.4 dB Typical at 12 GHz * High Associated Gain: 9.0 dB Typical at 12 GHz * High Output Power: 17.5 dBm Typical P 1 dB at 12 GHz * Cost Effective Ceramic Microstrip Package * Tape-and-Reel Packaging Option Available[1]
Description
The ATF-13336 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in low noise amplifiers operating in the 2-16 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.
36 micro-X Package
Electrical Specifications, TA = 25C
Symbol NFO Parameters and Test Conditions Optimum Noise Figure: VDS = 2.5 V, IDS = 20 mA f = 8.0 GHz f = 12.0 GHz f = 14.0 GHz f = 8.0 GHz f = 12.0 GHz f = 14.0 GHz Units dB dB dB dB dB Min. Typ. Max. 1.2 1.4 1.6 11.5 9.0 7.5 17.5 8.5 25 40 -4.0 55 50 -1.5 90 -0.5 1.6
GA
Gain @ NFO: VDS = 2.5 V, IDS = 20 mA
8.0
P1 dB G1 dB gm IDSS VP
Power Output @ 1 dB Gain Compression: VDS = 4 V, IDS = 40 mA 1 dB Compressed Gain: VDS = 4 V, IDS = 40 mA Transconductance: VDS = 2.5 V, VGS = 0 V Saturated Drain Current: VDS = 2.5 V, VGS = 0 V Pinch-off Voltage: VDS = 2.5 V, IDS = 1 mA
f = 12.0 GHz dBm f = 12.0 GHz dB mmho mA V
Note: 1. Refer to PACKAGING section "Tape-and-Reel Packaging for Surface Mount Semiconductors".
5965-8724E
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ATF-13336 Absolute Maximum Ratings
Symbol VDS VGS VGD IDS PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Power Dissipation [2,3] Channel Temperature Storage Temperature Units V V V mA mW C C Absolute Maximum[1] + 5 -4 -6 IDSS 225 175 -65 to +175
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE TEMPERATURE = 25C. 3. Derate at 2.5mW/C for TCASE > 85C. 4. Storage above +150C may tarnish the leads of this package difficult to solder into a circuit. After a device has been soldered into a circuit, it may be safely stored up to 175C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section for more information.
Thermal Resistance: Liquid Crystal Measurement:
jc = 400C/W; TCH = 150C 1 m Spot Size[5]
Part Number Ordering Information
Part Number ATF-13336-TR1 ATF-13336-STR Devices Per Reel 1000 10 Reel Size 7" strip
ATF-13336 Noise Parameters: VDS = 2.5 V, IDS = 20 mA
Freq. GHz 4.0 6.0 8.0 12.0 14.0 NFO dB 0.8 1.1 1.2 1.4 1.6 opt Mag .63 .47 .40 .52 .57 Ang 93 138 -153 -45 -2 RN/50 .27 .10 .20 .88 1.3
ATF-13336 Typical Performance, TA = 25C
16 14
GA
14 12 GA (dB)
GA
25 GA (dB)
20
MSG
12 10
10 GAIN (dB) 15 2.5 NFO (dB) 2.0
NFO
2.0 NFO (dB) 1.5 1.0 0.5 0 6.0 8.0 10.0
NFO
8 6
8
MAG
10
|S21|2
1.5 1.0
5
12.0 14.0 16.0
0
10
20
30 IDS (mA)
40
50
60
0 2.0
4.0
6.0
8.0 10.0 12.0 16.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 1. Optimum Noise Figure and Associated Gain vs. Frequency. VDS = 2.5V, IDS = 20 mA, TA = 25C.
Figure 2. Optimum Noise Figure and Associated Gain vs. IDS. VDS = 2.5V, f = 12.0 GHz.
Figure 3. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 2.5 V, IDS = 20 mA.
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Typical Scattering Parameters, Common Emitter, Z O = 50 , TA = 25C, VDS = 2.5 V, IDS = 20 mA
Freq. GHz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 S11 Mag. .96 .88 .86 .79 .69 .60 .54 .56 .56 .58 .63 .65 .66 .70 .72 Ang. -51 -75 -96 -117 -142 -178 141 103 74 44 20 3 -7 -19 -34 dB 10.6 10.3 10.1 9.9 10.2 10.1 9.8 8.9 8.3 7.6 6.7 6.0 5.5 4.9 4.4 S21 Mag. 3.39 3.28 3.19 3.13 3.22 3.21 3.10 2.80 2.60 2.39 2.17 2.00 1.89 1.76 1.66 Ang. 127 106 86 66 46 21 -4 -26 -48 -68 -90 -108 -126 -144 -175 dB -27.1 -23.4 -22.6 -20.6 -18.9 -17.6 -17.3 -16.7 -16.5 -16.8 -17.5 -18.3 -18.9 -19.0 -19.2 S12 Mag. .044 .060 .074 .093 .114 .132 .137 .147 .150 .145 .133 .121 .114 .112 .110 S22 Ang. 57 33 25 12 1 -18 -33 -48 -63 -78 -95 -107 -121 -129 -142 Mag. .61 .58 .57 .54 .49 .42 .31 .21 .09 .07 .16 .19 .19 .16 .14 Ang. -41 -51 -57 -65 -79 -97 -112 -121 -145 89 43 21 -4 -28 -32
A model for this device is available in the DEVICE MODELS section.
36 micro-X Package Dimensions
2.15 (0.085) SOURCE 4 DRAIN 3 0.508 (0.020) 2.11 (0.083) DIA.
GATE 1
133
2 2.54 (0.100)
SOURCE 1.45 0.25 (0.057 0.010)
0.15 0.05 (0.006 0.002)
0.56 (0.022)
4.57 0.25 0.180 0.010
Notes: 1. Dimensions are in millimeters (inches) 2. Tolerances: in .xxx = 0.005 mm .xx = 0.13
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